SUD50N06-08H0-E3 查看數據表（PDF） - Vishay Semiconductors
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SUD50N06-08H0-E3 Datasheet PDF : 5 Pages
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SUD50N06-08H
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
VGS = 10 V
ID = 20 A
1.7
1.4
10
1.1
TJ = 150 °C
TJ = 25 °C
0.8
0.5
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS
125
1
0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1000
100
75
50
Limited by
Package
25
100 *Limited by rDS(on)
10
1
TC = 25 °C
Single Pulse
10 µs
100 µs
1 ms
10 ms
100 ms
dc
0
0
25 50 75 100 125 150 175
TC - Case Temperature (°C)
Maximum Avalanche Drain Current
vs. Case Temperature
2
1 Duty Cycle = 0.5
0.1
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
*VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73160.
www.vishay.com
4
Document Number: 73160
S-71661-Rev. B, 06-Aug-07
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