SUM110N06-06-E3 查看數據表（PDF） - Vishay Semiconductors
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SUM110N06-06-E3 Datasheet PDF : 8 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
250
6V
200
VGS = 10 thru 7 V
200
150
150
SUM110N06-06
Vishay Siliconix
100
50
0
0
150
120
90
60
5V
3, 4 V
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
Output Characteristics
TC = - 55 °C
25 °C
125 °C
100
TC = 125 °C
50
25 °C
- 55 °C
0
0
1
2
3
4
5
6
7
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.010
0.008
0.006
0.004
VGS = 10 V
30
0.002
0
0
15
30
45
60
75
90
VGS - Gate-to-Source Voltage (V)
Transconductance
8000
7000
Ciss
6000
5000
4000
3000
2000
1000
Coss
0 Crss
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 72082
S-80108-Rev. B, 21-Jan-08
0.000
0
20
20
40
60
80
100 120
ID - Drain Current (A)
On-Resistance vs. Drain Current
16
VDS = 30 V
ID = 75 A
12
8
4
0
0
30
60
90
120 150 180
Qg - Total Gate Charge (nC)
Gate Charge
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