SUB65P06-20 查看數據表（PDF） - Vishay Semiconductors
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SUB65P06-20 Datasheet PDF : 4 Pages
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SUP/SUB65P06-20
Vishay Siliconix
P-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
–60
0.020
ID (A)
–65a
TO-220AB
S
DRAIN connected to TAB
GD S
Top View
SUP65P06-20
TO-263
G DS
Top View
SUB65P06-20
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Gate-Source Voltage
Continuous Drain Current
(TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 125_C
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Power Dissipation
TC = 25_C (TO-220AB and TO-263)
TA = 125_C (TO-263)c
Operating Junction and Storage Temperature Range
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
"20
–65a
–39
–200
–60
180
250d
3.7
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction-to-Ambient
PCB Mount (TO-263)c
Free Air (TO-220AB)
RthJA
RthJA
Junction-to-Case
RthJC
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70289
S-05111—Rev. C, 10-Dec-01
Limit
40
62.5
0.6
Unit
_C/W
www.vishay.com
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