SUB65P06-20 查看數據表（PDF） - Vishay Semiconductors
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SUB65P06-20 Datasheet PDF : 4 Pages
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SUP/SUB65P06-20
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = –250 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = –60 V, VGS = 0 V
VDS = –60 V, VGS = 0 V, TJ = 125_C
VDS = –60 V, VGS = 0 V, TJ = 175_C
VDS = –5 V, VGS = –10 V
VGS = –10 V, ID = –30 A
VGS = –10 V, ID = –30 A, TJ = 125_C
VGS = –10 V, ID = –30 A, TJ = 175_C
VDS = –15 V, ID = –30 A
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = –25 V, f = 1 MHz
VDS = –30 V, VGS = –10 V, ID = –65 A
VDD = –30 V, RL = 0.47 W
ID ] –65 A, VGEN = –10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Is
ISM
VSD
trr
IRM(REC)
Qrr
IF = –65 A, VGS = 0 V
IF = –65 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing
d. Independent of operating temperature.
Min Typ Max Unit
–60
V
–2.0
–3.0
–4.0
"100
nA
–1
–50
mA
–150
–120
A
0.017 0.020
0.033
W
0.042
25
S
4500
870
pF
350
85
120
24
nC
22
15
40
40
80
ns
65
120
30
60
–65
A
–200
–1.1
–1.4
V
70
120
ns
7
9
A
0.245 0.54
mC
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70289
S-05111—Rev. C, 10-Dec-01
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