SUM110N04-02L-E3 查看數據表（PDF） - Vishay Semiconductors

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SUM110N04-02L-E3

N-Channel 40-V (D-S) 175 °C MOSFET

Vishay Semiconductors 

SUM110N04-02L

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2.0

100

VGS = 10 V

ID = 30 A

1.6

1.2

TJ = 150 °C

10

TJ = 25 °C

0.8

0.4

0.0

- 50 - 25 0

25 50 75 100 125 150 175

TJ – Junction Temperature (°C)

On-Resistance vs. Junction Temperature

1000

1

0

0.3

0.6

0.9

1.2

V SD – Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

60

100

IAV (A) at TA = 25 °C

55

ID = 10 mA

10

IAV (A) at TA = 150 °C

50

1

45

0.1

0.00001 0.0001 0.001 0.01

0.1

1

tin (s)

Avalanche Current vs. Time

40

- 50 - 25 0

25 50 75 100 125 150 175

TJ – Junction Temperature (°C)

Drain Source Breakdown

vs. Junction Temperature

www.vishay.com

4

Document Number: 70763

S-80108-Rev. D, 21-Jan-08

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