SUM110N04-05H 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

生产厂家

SUM110N04-05H

N-Channel 40-V (D-S) 175 °C MOSFET

Vishay Semiconductors 

SUM110N04-05H

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2.0

100

VGS = 10 V

ID = 30 A

1.7

1.4

TJ = 150 °C

10

1.1

TJ = 25 °C

0.8

0.5

- 50 - 25 0

25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

1000

1

0

0.3

0.6

0.9

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

54

100

IAV (A) at TJ = 25 °C

10

51

ID = 1 mA

48

1

IAV (A) at TJ = 150 °C

0.1

0.00001 0.0001 0.001 0.01

0.1

1

tin (s)

Avalanche Current vs. Time

45

42

- 50 - 25 0

25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

Drain Source Breakdown vs.

Junction Temperature

www.vishay.com

4

Document Number: 73131

S-80274-Rev. B, 11-Feb-08

Share Link: