SUM110N04-05H 查看數據表（PDF） - Vishay Semiconductors
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SUM110N04-05H Datasheet PDF : 6 Pages
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THERMAL RATINGS
125
100
75
50
25
0
0
25 50 75 100 125 150 175
TA - Ambient Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
SUM110N04-05H
Vishay Siliconix
1000
100
10
1
0.1
0.01
Limited
by rDS(on)*
TC = 25 °C
Single Pulse
10 µs
100 µs
1 ms
10 ms, 100 ms, DC
0.001
0.1
* VGS
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area
2
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73131.
Document Number: 73131
S-80274-Rev. B, 11-Feb-08
www.vishay.com
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