UM110N04-2M1P-E3(Rev_A) 查看數據表（PDF） - Vishay Semiconductors
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UM110N04-2M1P-E3 Datasheet PDF : 8 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
5
VGS = 10 thru 5 V
200
4
SUM110N04-2m1P
Vishay Siliconix
150
VGS = 4 V
100
50
VGS = 3 V
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
400
TC = - 55 °C
320
3
2
1
0
0
0.0040
0.0032
TC = 125 °C
TC = 25 °C
TC = - 55 °C
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
240
TC = 25 °C
160
80
TC = 125 °C
0.0024
0.0016
0.0008
VGS = 4.5 V
VGS = 10 V
0
0
24000
16000
15
30
45
60
75
90
ID - Drain Current (A)
Transconductance
Ciss
8000
Coss
0 Crss
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 69983
S-80680-Rev. A, 31-Mar-08
0.0000
0
20
40
60
80
100 120
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 20 A
8
VDS = 20 V
6
VDS = 10 V
4
VDS = 30 V
2
0
0
50
100
150
200
250
Qg - Total Gate Charge (nC)
Gate Charge
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