UM110N04-2M1P-E3(Rev_A) 查看數據表（PDF） - Vishay Semiconductors
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UM110N04-2M1P-E3 Datasheet PDF : 8 Pages
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SUM110N04-2m1P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
ID = 30 A
1.7
1.4
VGS = 10 V
100
10
TJ = 150 °C
1
VGS = 4.5 V
1.1
0.1
TJ = 25 °C
0.8
0.01
0.5
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.010
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Forward Diode Voltage vs. Temperature
0.6
0.008
0.006
0.004
TJ = 150 °C
0.002
TJ = 25 °C
0.000
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1000
Limited by RDS(on)*
100
10
1
0.2
- 0.2
ID = 5 mA
- 0.6
ID = 250 µA
- 1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
10 µs
100 µs
1 ms
10 ms
100 ms, DC
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4
0.1
TC = 25 °C
Single Pulse
BVDSS
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 69983
S-80680-Rev. A, 31-Mar-08
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