UM110N04-2M1P-E3(Rev_A) 查看數據表（PDF） - Vishay Semiconductors
零件编号
产品描述 (功能)
生产厂家
UM110N04-2M1P-E3 Datasheet PDF : 8 Pages
| |||
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
350
280
210
140
Package Limited
70
0
0
25
50
75
100 125 150
TJ - Junction to Case (°C)
Current Derating*
400
350
300
250
200
150
100
50
0
0
SUM110N04-2m1P
Vishay Siliconix
25
50
75
100 125 150
TJ - Junction to Case (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69983.
Document Number: 69983
S-80680-Rev. A, 31-Mar-08
www.vishay.com
5
Share Link: 