SUM110N04-2M7H 查看數據表（PDF） - Vishay Semiconductors
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SUM110N04-2M7H Datasheet PDF : 6 Pages
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SUM110N04-2m7H
Vishay Siliconix
N-Channel 40-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
40
0.0027 at VGS = 10 V
ID (A)
110a
Qg (Typ.)
250
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• Package with Low Thermal Resistance
• High Threshold Voltage at High Temperature
RoHS
COMPLIANT
TO-263
G DS
Top View
Ordering Information: SUM110N04-2m7H-E3 (Lead (Pb)-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current (Single Pulse)
IAS
Avalanche Energy (Single Pulse)
L = 0.1 mH
EAS
Maximum Power Dissipationb
TC = 25 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).
Document Number: 72927
S-80273-Rev. C, 11-Feb-08
PCB Mountd
Symbol
RthJA
RthJC
Limit
40
± 20
110a
110a
440
75
281
375c
3.75
- 55 to 175
Limit
40
0.4
Unit
V
A
mJ
W
°C
Unit
°C/W
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