SUM09MN20-270 查看數據表（PDF） - Vishay Semiconductors
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SUM09MN20-270 Datasheet PDF : 5 Pages
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New Product
SUM09N20-270
Vishay Siliconix
N-Channel 200-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
200
rDS(on) (W)
0.270 @ VGS = 10 V
0.300 @ VGS = 6 V
ID (A)
9
8.5
D
TO-263
G DS
Top View
Ordering Information: SUM09N20-270
G
S
N-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
D New Low Thermal Resistance Package
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
200
VGS
"20
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energya
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_Cc
ID
IDM
IAR
EAR
PD
TJ, Tstg
9
5.2
10
7
2.45
60b
3.75
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 72158
S-03414—Rev. A, 03-Mar-03
Symbol
RthJA
RthJC
Limit
40
2.5
Unit
_C/W
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