SUM110P06-07L-E3 查看數據表（PDF） - Vishay Semiconductors
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SUM110P06-07L-E3 Datasheet PDF : 7 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
75
VGS = 10 V
ID = 30 A
1.7
72
ID = 250 µA
SUM110P06-07L
Vishay Siliconix
1.4
69
1.1
66
0.8
63
0.5
-50 -25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1000
60
-50 -25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
200
100
10
IAV (A) at TA = 25 °C
150
Package Limited
100
1
IAV (A) at TA = 150 °C
50
0.1
0.00001 0.0001 0.001
0.01
0.1
1
tin (s)
Avalanche Current vs. Time
0
0
25 50 75 100 125 150 175
TC - Case Temperature (°C)
Maximum Avalanche and Drain Current vs. Case Temperature
100
TJ = 150 °C
10
TJ = 25 °C
1000
Limited by R(DSon)*
100
10
1
TC = 25 °C
Single Pulse
10 µs
100 µs
1 ms
10 ms
100 ms, DC
1
0.0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
0.1
0.1
* VGS
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Source-Drain Diode Forward Voltage
Safe Operating Area
S15-1278-Rev. D, 08-Jun-15
4
Document Number: 72439
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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