SUM110P04-04L 查看數據表（PDF） - Vishay Semiconductors
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SUM110P04-04L Datasheet PDF : 8 Pages
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SUM110P04-04L
Vishay Siliconix
P-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
-40
RDS(on) ()
0.0042 at VGS = -10 V
0.0062 at VGS = -4.5 V
ID (A) d
-110
-110
FEATURES
• TrenchFET® Power MOSFET
• Low thermal resistance
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
TO-263
S
Top View
S
D
G
Ordering Information:
SUM110P04-04L-E3 (Lead (Pb)-free)
G
P-Channel MOSFET
D
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C) d
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy a
Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TA = 25 °C b
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient PCB Mount b
Junction-to-Case
Notes
a. Duty cycle 1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
SYMBOL
RthJA
RthJC
LIMIT
-40
± 20
-110
-110
-240
-75
281
375 c
3.75
-55 to 175
LIMIT
40
0.4
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S13-2478-Rev. D, 09-Dec-13
1
Document Number: 72437
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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