SUM110P04-05-E3 查看數據表（PDF） - Vishay Semiconductors
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SUM110P04-05-E3 Datasheet PDF : 6 Pages
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P-Channel 40-V (D-S) MOSFET
SUM110P04-05
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
- 40
0.005 at VGS = - 10 V
ID (A)a
- 110
Qg (Typ.)
185 nC
FEATURES
• TrenchFET® Power MOSFET
TO-263
S
RoHS
COMPLIANT
GDS
Top View
Drain Connected to Tab
Ordering Information: SUM110P04-05-E3 (Lead (Pb)-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 40
V
VGS
± 20
TC = 25 °C
- 110a
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C
TA = 25 °C
ID
- 110a
39b, c
Pulsed Drain Current
TA = 70 °C
33b, c
A
IDM
240
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
110
10b, c
Avalanche Current
Single-Pulse Avalanche Energy
IAS
75
L = 0.1 mH
EAS
281
mJ
TC = 25 °C
375
Maximum Power Dissipation
TC = 70 °C
262
TA = 25 °C
PD
15b, c
W
TA = 70 °C
10.5b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to 175
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t ≤ 10 s
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 40 °C/W.
Document Number: 73493
S-80274-Rev. B, 11-Feb-08
Symbol
RthJA
RthJC
Typical
8
0.33
Maximum
10
0.4
Unit
°C/W
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