NE85001 查看數據表（PDF） - NEC => Renesas Technology
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NE85001 Datasheet PDF : 6 Pages
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PRELIMINARY DATA SHEET
GaAs MES FET
NE85001 SERIES
1 W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator
applications and so on.
NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
has a PHS. (Plated Heat Sink)
NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
• Class A operation
• High power output
• High reliability
PHYSICAL DIMENSIONS
NE8500100 (CHIP) (unit: µm)
170
146
65
SELECTION CHART
PART NUMBER FORM
NE8500100(*)
chip
NE8500100-WB
NE8500100-RG
NE8500199
package
PERFORMANCE SPECIFIED
Pout (**)
(dBm)
GL (**)
(dB)
USABLE
FREQUENCY
(GHz)
28.5 min
9.0 typ
2.0 to 10
28.5 min
9.0 typ
2.0 to 10
640
100
100
100
780
PACKAGE CODE-99 (unit: mm)
1.0 ±0.1
* WB, RG indicate a type of containers for chips.
WB: black carrier, RG: ring,: gel-pack,
** Specified at the condition at the last page.
4.0 MIN BOTH LEADS
SOURCE
4.3 ±0.2
GATE φ 2.2 ±0.3
2 PLACES
4.0
0.1
0.2 MAX.
1.7 ±0.15
DRAIN
0.6 ±0.1
5.2 ±0.3
11.0 ±0.3
15.0 ±0.3
6.0 ±0.2
5.0 MAX.
1.2
Document No. P10968EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
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