SWP100N03 查看數據表（PDF） - Xian Semipower Electronic Technology Co., Ltd.
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SWP100N03 Datasheet PDF : 5 Pages
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SAMWIN
SW100N03
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
IDSS Drain to source leakage current
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics
VGS=0V, ID=250uA
VDS=30V, VGS=0V
VDS=24V, TC=125oC
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 50A
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr
Rising time
td(off) Turn off delay time
tf
Fall time
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VGS=0V, VDS=15V, f=1MHz
VDS=15V, ID=1A,
RG=6Ω ,VGS=10V
VDS=15V, VGS=5V, ID=16A
Min. Typ. Max. Unit
30
-
-
V
-
-
1 uA
-
-
100 uA
-
-
100 nA
-
-
-100 nA
1.0
-
3.0 V
-
4.2
5.3 mΩ
-
9500
-
-
800
-
pF
-
300
-
-
25.7 50
-
10
20
ns
-
128 200
-
34
70
-
50
65
-
20.8
-
nC
-
19
-
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
VSD Diode forward voltage drop.
IS=110A, VGS=0V
※. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2.
L = 200uH, IAS = 110A, VDD = 25V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 110A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
-
-
Typ.
-
-
Max. Unit
90
A
1.5 V
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