SW4N60V 查看數據表（PDF） - Xian Semipower Electronic Technology Co., Ltd.
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SW4N60V Datasheet PDF : 7 Pages
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SAMWIN
SW4N60V
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS Breakdown voltage temperature
/ ΔTJ coefficient
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Dynamic characteristics
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr
Rising time
td(off) Turn off delay time
tf
Fall time
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDS=600V, VGS=0V
VDS=480V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
VDS=VGS, ID=250uA
VGS=10V, ID = 2.0A
VGS=0V, VDS=25V, f=1MHz
VDS=300V, ID=4.0A, RG=25Ω
VDS=480V, VGS=10V, ID=4.0A
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD Diode forward voltage drop.
IS=4.0A, VGS=0V
Trr
Reverse recovery time
Qrr
Breakdown voltage temperature
IS=4.0A, VGS=0V,
dIF/dt=100A/us
※. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2.
L = 25mH, IAS = 4.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 4.0A, di/dt = 200A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
600
-
-
-
-
-
2.0
Min.
-
-
-
-
-
Typ. Max. Unit
-
-
V
0.68
- V/oC
-
1 uA
-
10 uA
-
100 nA
-
-100 nA
-
4.0 V
2.2
2.5 Ω
570 740
64
83 pF
14
18
25
32
54
70
ns
120 157
34
45
25
30
2.9
-
nC
8.2
-
Typ.
-
-
-
580
1.8
Max. Unit
4
A
16
A
1.4 V
-
ns
-
uC
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