SW4N60V 查看數據表（PDF） - Xian Semipower Electronic Technology Co., Ltd.
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SW4N60V Datasheet PDF : 7 Pages
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SAMWIN
SW4N60V
Fig. 1. On-state characteristics
101
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
100 Bottom : 5.5 V
10-1
10-2
10-1
، طNotes :
1. 250¥ىs Pulse Test
2. T = 25،ة
C
100
101
V , Drain-Source Voltage [V]
DS
Fig. 3. On-resistance variation vs.
drain current and gate voltage
6
5
4
V = 10V
GS
3
2
V = 20V
GS
1
، طNote : T = 25،ة
J
0
0
2
4
6
8
10
12
I , Drain Current [A]
D
Fig. 5. Capacitance characteristics
(Non-Repetitive)
750
C =C +C (C =shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
500
C
iss
250
C
oss
C
rss
، طNotes :
1. V = 0V
GS
2. f=1MHz
0
0
5
10
15
20
25
30
35
V , Drain-Source Voltage [V]
DS
Fig. 2. Transfer characteristics
101
100
150oC
10-1
2
25oC
-55oC
، طNotes :
1. V = 50V
DS
2. 250¥ىs Pulse Test
3
4
5
6
7
8
9
10
V , Gate-Source Voltage [V]
GS
Fig. 4. On state current vs.
diode forward voltage
101
150،ة
25،ة
100
، طNotes :
1. V = 0V
GS
2. 250¥ىs Pulse Test
10-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain voltage [V]
SD
Fig. 6. Gate charge characteristics
12
V = 120V
DS
10
V = 300V
DS
V = 480V
DS
8
6
4
2
، طNote : I = 4.0 A
D
0
0
4
8
12
16
20
24
28
Q , Total Gate Charge [nC]
G
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