SW4N60V 查看數據表（PDF） - Xian Semipower Electronic Technology Co., Ltd.
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SW4N60V Datasheet PDF : 7 Pages
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SAMWIN
SW4N60V
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
1.2
1.1
1.0
0.9
0.8
-100
، طNotes :
1. V = 0 V
GS
2. I = 250 ¥ىA
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Fig. 9. Maximum drain current vs.
case temperature.
5
4
3
2
1
0
25
50
75
100
125
150
T Case Temperature [oC]
C'
Fig. 11. Transient thermal response curve
Fig. 8. On resistance variation
vs. junction temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Fig. 10. Maximum safe operating area
102
Operation in This Area
is Limited by R
DS(on)
101
100
100 s
1 ms
10 ms
DC
10-1
، طNotes :
1. T = 25 oC
C
2. T = 150 oC
J
10-2
3. Single Pulse
100
101
102
103
V , Drain-Source Voltage [V]
DS
100
D=0.5
10-1
0.2
0.1
0.05
0.02
0.01
single pulse
، طNotes :
1. Z (t) = 1.25 ،ة/W Max.
¥èJC
2. Duty Factor, D=t /t
12
3. T - T = P * Z (t)
JM
C
DM
¥èJC
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t , Square Wave Pulse Duration [sec]
1
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