PHT4NQ10LT 查看數據表（PDF） - Philips Electronics

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PHT4NQ10LT

N-channel enhancement mode field-effect transistor

Philips Electronics 

PHT4NQ10LT

N-channel enhancement mode field-effect transistor

M3D087

Rev. 01 — 11 September 2000

Product specification

1. Description

N-channel enhancement mode field-effect transistor in a plastic package using

TrenchMOS™1 technology.

Product availability:

PHT4NQ10LT in SOT223.

2. Features

s TrenchMOS™ technology

s Fast switching

s Low on-state resistance

s Surface mount package

s Logic level compatible.

3. Applications

s Primary side switch in DC to DC convertors

c

c

s High speed driver

s Fast general purpose switch.

4. Pinning information

Table 1: Pinning - SOT223, simplified outline and symbol

Pin

Description

Simplified outline

1

gate (g)

4

2

drain (d)

3

source (s)

4

drain (d)

1

Top view

2

3

MSB002 - 1

SOT223

Symbol

d

g

MBB076

s

1. TrenchMOS is a trademark of Royal Philips Electronics

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