PHT4NQ10LT 查看數據表（PDF） - Philips Electronics
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PHT4NQ10LT Datasheet PDF : 13 Pages
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Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tj = 25 to 150 °C
Tsp = 25 °C; VGS = 5 V
Tsp = 25 °C
VGS = 5 V; ID = 1.75 A
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
drain-source voltage (DC)
drain-gate voltage (DC)
Tj = 25 to 150 °C
Tj = 25 to 150 °C; RGS = 20 kΩ
VGS
gate-source voltage (DC)
ID
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tsp = 25 °C; VGS = 5 V; Figure 2 and 3
Tsp = 100 °C; VGS = 5 V;
Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tsp = 25 °C; Figure 1
Tstg
storage temperature
Tj
operating junction temperature
Source-drain diode
IS
source (diode forward) current (DC) Tsp = 25 °C
ISM
peak source (diode forward) current Tsp = 25 °C; tp ≤ 10 µs
Avalanche ruggedness
EAS
non-repetitive avalanche energy
unclamped inductive load; ID = 3.5 A;
tp = 0.2 ms; VDD ≤ 15 V; RGS = 50 Ω;
VGS = 5 V; starting Tj = 25 °C; Figure 4
IAS
non-repetitive avalanche current unclamped inductive load; VDD ≤ 15 V;
RGS = 50 Ω; VGS = 5 V; Figure 4
Typ
Max Unit
−
100
V
−
3.5
A
−
6.9
W
−
150
°C
200
250
mΩ
Min
Max Unit
−
100
V
−
100
V
−
±16
V
−
3.5
A
−
2.2
A
−
14
A
−
6.9
W
−65
+150 °C
−65
+150 °C
−
3.5
A
−
14
A
−
45
mJ
−
3.5
A
9397 750 07342
Product specification
Rev. 01 — 11 September 2000
© Philips Electronics N.V. 2000. All rights reserved.
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