BC140 查看數據表（PDF） - Philips Electronics
零件编号
产品描述 (功能)
生产厂家
BC140 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN medium power transistors
Product specification
BC140; BC141
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
BC140-10; BC141-10
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 100 µA; VCE = 1 V
−
10 100 nA
−
10 100 µA
−
−
100 nA
−
40 −
BC140-16; BC141-16
−
90 −
hFE
DC current gain
BC140-10; BC141-10
IC = 100 mA; VCE = 1 V
63 100 160
BC140-16; BC141-16
100 160 250
hFE
DC current gain
BC140-10; BC141-10
IC = 1 A; VCE = 1 V
−
20 −
BC140-16; BC141-16
−
30 −
VCEsat
VBE
Cc
Ce
fT
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
IC = 1 A; IB = 100 mA
−
IC = 1 A; VCE = 1 V
−
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
IC = 50 mA; VCE = 10 V; f = 100 MHz 50
0.6 1
V
1.2 1.8 V
−
25 pF
−
80 pF
−
−
MHz
Switching times (between 10% and 90% levels)
ton
turn-on time
toff
turn-off time
ICon = 100 mA; IBon = 5 mA;
IBoff = −5 mA
−
−
250 ns
−
−
850 ns
1997 May 12
4
Share Link: 