T435-700W-TR 查看數據表（PDF） - STMicroelectronics

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T435-700W-TR

4A TRIACs

STMicroelectronics 

T4 Series

Table 3: Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (full sine

wave)

IPAK/DPAK/

TO-220AB

Tc = 110°C

4

A

ISOWATT220AB Tc = 105°C

ITSM

Non repetitive surge peak on-state F = 50 Hz

current (full cycle, Tj initial = 25°C) F = 60 Hz

t = 20 ms

30

t = 16.7 ms

31

A

I²t

I²t Value for fusing

tp = 10 ms

5.1

A²s

dI/dt

Critical rate of rise of on-state cur-

rent IG = 2 x IGT , tr ≤ 100 ns

F = 120 Hz

Tj = 125°C

50

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 125°C

4

A

PG(AV)

Tstg

Tj

Average gate power dissipation

Storage junction temperature range

Operating junction temperature range

Tj = 125°C

1

W

- 40 to + 150

- 40 to + 125

°C

Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)

Symbol

Test Conditions

Quadrant

IGT (1)

VGT

VGD

IH (2)

VD = 12 V RL = 30 Ω

VD = VDRM RL = 3.3 kΩ

Tj = 125°C

IT = 100 mA

IL

IG = 1.2 IGT

dV/dt (2)

VD = 67 %VDRM gate open

Tj = 125°C

(dV/dt)c = 0.1 V/µs Tj = 125°C

(dI/dt)c (2) (dV/dt)c = 10 V/µs Tj = 125°C

Without snubber Tj = 125°C

Note 1: minimum IGT is guaranted at 5% of IGT max.

Note 2: for both polarities of A2 referenced to A1.

I - II - III

I - II - III

I - II - III

I - III

II

MAX.

MAX.

MIN.

MAX.

MAX.

MIN.

MIN.

T405

5

10

10

15

20

1.8

0.9

-

T4

T410

10

1.3

0.2

15

25

30

40

2.7

2.0

-

Unit

T435

35 mA

V

V

35 mA

50

mA

60

400 V/µs

-

- A/ms

2.5

2/10

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