T435-700W-TR 查看數據表（PDF） - STMicroelectronics
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T435-700W-TR Datasheet PDF : 10 Pages
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T4 Series
Figure 1: Maximum power dissipation versus
RMS on-state current (full cycle)
Figure 2: RMS on-state current versus case
temperature (full cycle)
P(W)
6
5
4
3
2
1
IT(RMS)(A)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IT(RMS)(A)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
TO-220AB / DPAK / IPAK
ISOWATT220AB
TC(°C)
50
75
100
125
Figure 3: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm) (full cycle)
Figure 4: Relative variation of thermal
impedance versus pulse duration
IT(RMS)(A)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
TC(°C)
50
75
DPAK
(S=0.5CM2)
100
125
1E+0
K=[Zth/Rth]
Rth(j-c)
1E-1
TO-220AB / DPAK / IPAK
ISOWATT220AB
DPAK / IPAK
Rth(j-a)
TO-220AB / ISOWATT220AB
1E-2
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
Figure 5: On-state characteristics (maximum
values)
Figure 6: Surge peak on-state current versus
number of cycles
30.0
10.0
ITM(A)
Tj max.
Vto = 0.90V
Rd = 120 mΩ
Tj = Tj max.
1.0
Tj = 25°C.
VTM(V)
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
ITSM(A)
35
30
25
20
Non repetitive
Tj initial=25°C
15
Repetitive
10
TC=110°C
5
Number of cycles
0
1
10
100
t=20ms
One cycle
1000
4/10
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