TB1800M-13 查看數據表（PDF） - Diodes Incorporated.
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TB1800M-13 Datasheet PDF : 4 Pages
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Electrical Characteristics @ TA = 25°C unless otherwise specified
Part Number
Rated
Repetitive
Off-State
Voltage
Off-State
Leakage
Current @
VDRM
On-State
Breakover
Voltage
Voltage
@ IT = 1A
VDRM (V) IDRM (uA)
VBO (V)
VT (V)
TB0640M
58
5
77
3.5
TB0720M
65
5
88
3.5
TB0900M
75
5
98
3.5
TB1100M
90
5
130
3.5
TB1300M
120
5
160
3.5
TB1500M
140
5
180
3.5
TB1800M
160
5
220
3.5
TB2300M
190
5
265
3.5
TB2600M
220
5
300
3.5
TB3100M
275
5
350
3.5
TB3500M
320
5
400
3.5
Breakover
Current
IBO
Holding Current Off-State
IH
Capacitance
Marking Code
Min
(mA)
50
50
50
50
50
50
50
50
50
50
50
Max
(mA)
800
800
800
800
800
800
800
800
800
800
800
Min
(mA)
150
150
150
150
150
150
150
150
150
150
150
Max (mA)
800
800
800
800
800
800
800
800
800
800
800
CO (pF)
140
140
140
90
90
90
90
60
60
60
60
T064M
T072M
T090M
T110M
T130M
T150M
T180M
T230M
T260M
T310M
T350M
Symbol
VDRM
IDRM
VBR
IBR
VBO
IBO
IH
VT
IPP
CO
Parameter
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
NOTE: 1
On state voltage
Peak pulse current
Off-state capacitance
NOTE: 2
Notes:
1. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
recovery time does not exceed 30ms.
2. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias.
I
IPP
IBO
IH
IBR
IDRM
VT
V
VBR
VDRM
VBO
UNDER DEVELOPMENT
DS30361 Rev. 2 - 1
2 of 4
TB0640M - TB3500M
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