TBA816-ISSN 查看數據表（PDF） - Unspecified

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TBA816-ISSN

Pigtailed PD for analog application

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Pigtailed PD for analog application

DataSheet TAP4NN3 Series

Absolute Maximum Ratings

Parameters

Symbol

Ambient Operating Temperature

Top

Storage Temperature

Tstg

Reverse Voltage

VRP

Reverse Current

IRP

Forward Current

IFL

Lead Soldering Temp./Time

Unit

℃

℃

V

mA

mA

℃/sec

Min.

-40

-40

-

-

-

Max.

85

85

15/20/

3/1 /

50/2/

260/10

Remarks

Outdoor use

Electrical & Optical Characteristics

Parameters

Symbol

Condition

Unit Min.

Typ.

(Top = 25℃)

Max. Remark

Detection range

VR=5V, R>0.75

λ

µm 1.1

1.6

R > 0.65

Responsivity

Dark Current

Cut-off Frequency

Reverse Breakdown

Voltage

VR=5V,λ=1.3µm

0.80 0.85

R

A/W

VR=5V, λ=1.5µm

0.85 0.90

ID

VR=5V

nA

1.0

fc

-3dB, VR=5V GHz 2/3

RL=50Ω

VBD VR=5V, IRD=1µA V 25/0

Capacitance

Second-Order Distortion

C

VR=5V, f=1MHz pF

VR=12V,

IMD2

PAVG=0dBm,

dBc

OMI=0.4, Note1

Third-Order Distortion

IMD3

Note 1

dBc

0.6

TAP4NN31)

-70 TZP4NN32)

TBP4NN33)

TZP4NN32)

-75

TBP4NN33)

Back Reflection

IL

dB

-45

Active Area

∅

Diameter

µm

75/70

45

for 2GHz

for 5GHz

Note1-1) TAP4NN3 : Two-tone test condition : f1=13MHz, f2=19MHz, f1±f2

Note1-2) TZP4NN3 : Two-tone test condition : f1=320MHz, f2=450MHz, f1±f2, λ=1550nm per channel

Note1-3) TBP4NN3 : same as the Note1-2

! Handling Caution

The Photo-diode can be damaged by overvoltage and current surges. Precautions should be

taken for transient power supply.

This device is susceptible to damage as a result of electrostatic discharge(ESD). Take proper

precautions during both handling and testing

Teradian Inc.

-2/4-

DS-TP-110-Rev01

2004-07-14

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