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TC1030

Linear Building Block – Quad Low Power Op Amp with Shutdown Modes

Microchip Technology 

TC1030

1.0 ELECTRICAL

CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................6.0V

Voltage on Any Pin .......... (VSS – 0.3V) to (VDD + 0.3V)

Junction Temperature....................................... +150°C

Operating Temperature Range............. -40°C to +85°C

Storage Temperature Range .............. -55°C to +150°C

*Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

TC1030 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Typical values apply at 25°C and VDD = 3.0V; TA = -40° to +85°C, and VDD = 1.8V to 5.5V, unless

otherwise specified.

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

VDD

Supply Voltage

Shutdown Inputs

VIH

Input High Threshold

VIL

Input Low Threshold

ISI

Shutdown Input Current,

SHDNB or SHDNC/D

Op Amps

IQ

Supply Current, Operating

1.8

80% VDD

—

—

—

ISHDN

Supply Current Shutdown Mode

—

ROUT(SD) Output Resistance in Shutdown

20

COUT(SD) Out Capacitance in Shutdown

—

TSEL

Select Time

—

(VOUT from SHDNB, SHDNC/D) = VIL

TDESEL Deselect Time

—

(VOUT from SHDNB, SHDNC/D) = VIL

AVOL

Large Signal Voltage Gain

—

GBWP Gain-Bandwidth Product

—

VICMR

VOS

Common Mode Input Voltage Range

Input Offset Voltage

VSS – 0.2

IB

Input Bias Current

-100

VOS(DRIFT) Input Offset Voltage Drift

—

SR

Slew Rate

—

VOUT

CMRR

Output Signal Swing

Common Mode Rejection Ratio

PSRR Power Supply Rejection Ratio

VSS + 0.05

70

80

—

—

—

—

20

6

—

—

15

20

100

90

—

±100

±0.3

50

±4

35

—

—

—

5.5

V

—

V

20% VDD

V

±100

nA

32

µA All Outputs Open,

SHDNB = VDD,

SHDNC/D = VDD

10

µA SHDNB = VSS,

SHDNC/D = VSS

—

MΩ SHDNB = VSS,

SHDNC/D = VSS

5

pF SHDNB = VSS,

SHDNC/D = VSS

—

µsec RL = 10kΩ to VSS

—

nsec RL = 10kΩ to VSS

—

V/mV RL = 10kΩ, VDD = 5V

—

kHz VDD = 1.8V to 5.5V;

VO = VDD to VSS

VDD + 0.2

V

±500

±1.5

µV VDD = 3V, VCM = 1.5V, TA = 25°C,

mV TA = –40°C to 85°C

100

pA TA = 25°C;

VCM = VDD to VSS

—

µV/°C VDD = 3V; VCM = 1.5V

—

mV/µsec CL = 100pF;

RL = 1 MΩ to GND,

Gain = 1

VIN = VSS to VDD

VDD – 0.05 V RL = 10kΩ

—

dB TA = 25°C; VDD = 5V;

VCM = VDD to VSS

—

dB TA = 25°C; VCM = VSS;

VDD = 1.8V to 5V

DS21341B-page 2

© 2002 Microchip Technology Inc.

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