CGY2011G 查看數據表（PDF） - Philips Electronics

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CGY2011G

GSM 4 W power amplifiers

Philips Electronics 

Philips Semiconductors

GSM 4 W power amplifiers

Objective specification

CGY2010G; CGY2011G

FEATURES

• Power Amplifier (PA) overall efficiency 45%

• 35.5 dB gain

• 0 dBm input power

• Gain control range >55 dB

• Integrated power sensor driver

• Low output noise floor of PA < −129 dBm/Hz in GSM RX

band

• Wide operating temperature range −20 to +85 °C

• LQFP 48 pin package

• Compatible with power ramping controller PCA5075

• Compatible with GSM RF transceiver SA1620.

GENERAL DESCRIPTION

The CGY2010G and CGY2011G are GSM class 4 GaAs

Monolithic Microwave Integrated Circuits (MMICs) power

amplifiers specifically designed to operate at 4.8 V battery

supply. These ICs also include a power sensor driver so

that no directional coupler is required in the power control

loop.

Both ICs have the same performance but are issued from

different wafer fabs.

The PAs require only a 30 dB harmonic low-pass filter to

comply with the GSM transmit spurious specification.

They can be switched off and their power controlled by

monitoring the actual drain voltage applied to the amplifier

stages.

APPLICATIONS

• 880 to 915 MHz hand-held transceivers for E-GSM

applications

• 900 MHz TDMA systems.

QUICK REFERENCE DATA

SYMBOL

PARAMETER (1)

MIN.

VDD

positive supply voltage

−

IDD

positive peak supply current

−

Pout(max)

maximum output power

−

Tamb

operating ambient temperature

−20

Note

1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.

TYP.

4.2

1.8

35.5

−

MAX.

−

−

−

+85

UNIT

V

A

dBm

οC

ORDERING INFORMATION

TYPE

NUMBER

CGY2010G

CGY2011G

NAME

PACKAGE

DESCRIPTION

LQFP48 plastic low profile quad flat package; 48 leads; body 7 × 7 × 1.4 mm

VERSION

SOT313-2

1996 Jul 08

2

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