CGY2010G 查看數據表（PDF） - Philips Electronics

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CGY2010G

GSM 4 W power amplifiers

Philips Electronics 

Philips Semiconductors

GSM 4 W power amplifiers

Objective specification

CGY2010G; CGY2011G

DC CHARACTERISTICS

VDD = 4.5 V; Tamb = 25 °C; general operating conditions applied; peak current values during burst; unless otherwise

specified.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

Pins RFO/VDD4, VDD3, VDD2, VDD1 and DETO/VDD5

VDD

positive supply voltage

IDD

positive peak supply current

Pins VGG1 and VGG2

VGG1

VGG2

IGG1 + IGG2

negative supply voltage

negative supply voltage

negative peak supply current

note 1

note 1

0

4.2 5.5 V

−

1.8 2.2 A

−

−2

−

V

−

−2

−

V

−

2.5 5

mA

Note

1. The negative bias VGG1 and VGG2 must be applied 10 µs before the power amplifier is switched on, and must remain

applied until the power amplifier has been switched off.

1996 Jul 08

6

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