CGY2011G 查看數據表（PDF） - Philips Electronics

零件编号

产品描述 (功能)

生产厂家

CGY2011G

GSM 4 W power amplifiers

Philips Electronics 

Philips Semiconductors

GSM 4 W power amplifiers

Objective specification

CGY2010G; CGY2011G

AC CHARACTERISTICS

VDD = 4.5 V; Tamb = 25 °C; general operating conditions applied; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP.

MAX.

UNIT

Power amplifier

Pin

S11

fRF

Pout(max)

input power

input return loss

RF frequency range

maximum output power

η

Pout(min)

NRX

efficiency

minimum output power

output noise in RX band

H2

H3

Stab

2nd harmonic level

3rd harmonic level

stability

Power sensor driver

Pout(DET)

∆Pout(DET)

sensor driver output

power

driver output power

variation

note 1; 50 Ω source

Tamb = 25 °C; VDD = 4.5 V

Tamb = −20 to +85 °C; VDD = 4.2 V

VDD = 4.2 V

VDD < 0.1 V

fRF = 925 MHz at Pout(max)

fRF = 935 MHz at Pout(max)

fRF = 960 MHz at Pout(max)

note 2

−1.5

−

880

34.5

32.5

−

−

−

−

−

−

−

−

RL = 100 Ω; relative to PA output −

power into 50 Ω load

load VSWR < 6 : 1 at PA output

−

−

−

−

35.5

−

45

−

−

−

−

−33

−40

−

−23

−

+1.5

−6

915

−

−

−

−20

−117

−129

−129

−30

−37

−70

dBm

dB

MHz

dBm

dBm

%

dBm

dBm/Hz

dBm/Hz

dBm/Hz

dBc

dBc

dBc

−

dBc

2

dB

Notes

1. Including the 100 Ω resistor connected in parallel at the power amplifier input on the evaluation board.

2. The device is adjusted to provide nominal value of load power into a 50 Ω load. The device is switched off and a 6 : 1

load replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied

360 electrical degrees during a 60 second period.

1996 Jul 08

7

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