TC1411NCPA 查看數據表（PDF） - TelCom Semiconductor Inc => Microchip
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TC1411NCPA Datasheet PDF : 5 Pages
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1A HIGH-SPEED MOSFET DRIVERS
TYPICAL CHARACTERISTICS (Cont.)
Rise Time vs. Supply Voltage
CLOAD = 1000pF
100
80
60
TA = 85°C
40
TA = 25°C
20
TA = –40°C
0
4
6
8
10
12
14
16
VDD (VOLTS)
TD1 Propagation Delay vs. Supply Voltage
CLOAD = 1000pF
100
80
60
TA = 85°C
TA = 25°C
40
TA = –40°C
20
0
4
6
8
10
12
14
16
VDD (VOLTS)
Rise and Fall Times vs. Capacitive Load
TA = 25°C, VDD = 16V
100
80
TRISE
60
40
TFALL
20
0
0
500 1000 1500 2000 2500 3000 3500
CLOAD (pF)
TELCOM SEMICONDUCTOR, INC.
1
TC1411
TC1411N
Fall Time vs. Supply Voltage
2
CLOAD = 1000pF
100
80
60
TA = 85°C
3
40
TA=25°C
20
TA=–40°C
0
4
6
8
10
12
14
16
VDD (VOLTS)
4
TD2 Propagation Delay vs. Supply Voltage
CLOAD = 1000pF
100
80
60
TA = 85°C
TA=25°C
5
40
TA = –40°C
20
0
4
6
8
10
12
VDD (VOLTS)
14
16
6
Propagation Delays vs. Capacitive Load
TA = 25°C, VDD = 16V
36
34
TD2
32
7
30
TD1
28
26
0
500 1000 1500 2000 2500 3000 3500
CLOAD (pF)
8
4-193
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