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TDA7492MV 查看數據表(PDF) - STMicroelectronics

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TDA7492MV
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TDA7492MV Datasheet PDF : 26 Pages
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TDA7492MV
Electrical specifications
Table 5.
Symbol
Electrical specifications (continued)
Parameter
Condition
Min Typ Max Unit
VUVP
Undervoltage protection
threshold
-
-
-
7
V
RdsON
Power transistor on resistance
High side
Low side
-
0.2 -
-
0.2 -
Po
Output power
THD = 10%
THD = 1%
-
40 -
W
-
32 -
Po
Output power
PD
η
THD
Dissipated power
Efficiency
Total harmonic distortion
RL = 6 , THD = 10%,
VCC = 25V
RL = 6 , THD = 1%
VCC = 25V
Po =40W, THD = 10%
Po = 40 W
Po = 1 W
GAIN0 = L, GAIN1 = L
-
50 -
W
-
40 -
-
4.0 -
W
80 90 -
%
-
0.1 0.4 %
20.6 21.6 22.6
GV
Closed-loop gain
GAIN0 = L, GAIN1 = H
GAIN0 = H, GAIN1 = L
26.6 27.6 28.6
dB
30.1 31.1 32.1
GAIN0 = H, GAIN1 = H 32.6 33.6 34.6
GV
Gain matching
eN
Total input noise
-
A Curve, GV = 20 dB
f = 22 Hz to 22 kHz
-1 -
1
dB
-
20 -
µV
-
25 35
SVRR
Tr, Tf
fSW
fSWR
Supply voltage rejection ratio
Rise and fall times
Switching frequency
Output switching frequency
range
fr = 100 Hz, Vr = 0.5 V,
CSVR = 10 µF
40
50
-
dB
-
-
50 -
ns
Internal oscillator
290 310 330 kHz
With internal oscillator (1) 250 -
With external oscillator (2) 250 -
400
kHz
400
VinH
Digital input high (H)
-
VinL
Digital input low (L)
2.3 -
-
-
-
V
0.8
AMUTE Mute attenuation
VMUTE = 1 V
60 80 -
dB
1. fSW = 106 / ((16 * ROSC + 182) * 4) kHz, fSYNCLK = 2 * fSW with R3 = 39 k(see Figure 21.).
2. fSW = fSYNCLK / 2 with the frequency of the external oscillator.
Doc ID 16264 Rev 1
9/26

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