Philips Semiconductors
10-bit high-speed low-power
analog-to-digital converter
Product specification
TDA8762
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
Reference voltages for the resistor ladder; see Table 1
VRB
VRT
Vdiff
Iref
RLAD
TCRLAD
reference voltage BOTTOM
reference voltage TOP
differential reference voltage
VRT − VRB
reference current
resistor ladder
temperature coefficient of the resistor
ladder
VosB
VosT
VI(p-p)
offset voltage BOTTOM
offset voltage TOP
analog input voltage
(peak-to-peak value)
note 2
note 2
note 3
1.2 1.3 −
V
−
3.8
VCCA − 0.8 V V
1.8 2.5 3.0
V
−
28
−
−
90
−
−
1860 −
−
167 −
−
220 −
−
220 −
1.5 2.06 2.5
mA
Ω
ppm
mΩ/K
mV
mV
V
Outputs
DIGITAL OUTPUTS D9 TO D0 AND IR (REFERENCED TO OGND)
VOL
LOW level output voltage
VOH
HIGH level output voltage
IOZ
output current in 3-state mode
IO = 1 mA
IO = 0 mA
IO = −0.4 mA
IO = −1 mA
0.4 V < VO < VCCO
Switching characteristics
0
−
2.7 −
2.7 −
2.4 −
−20 −
0.4
V
VCCO − 0.5 V
VCCO − 1.3 V
VCCO − 1.4 V
+20
µA
CLOCK INPUT CLK; see Fig.4; note 1
fclk(max)
tCPH
tCPL
maximum clock frequency
clock pulse width HIGH
clock pulse width LOW
Analog signal processing
40
−
−
8
−
−
8
−
−
MHz
ns
ns
LINEARITY
INL
integral non-linearity
fclk = 40 MHz;
ramp input
−
±0.75 ±1.5
LSB
DNL
differential non-linearity
fclk = 40 MHz;
ramp input
−
±0.3 ±0.7
LSB
OFER offset error
middle code;
−
±1
−
LSB
VRB = 1.3 V; VRT = 3.8 V
GER
gain error (from device to device)
VRB = 1.3 V;
−
±0.1 −
%
VRT = 3.8 V; note 4
1996 Mar 28
7