Philips Semiconductors
10-bit high-speed low-power ADC
Product specification
TDA8764A
CHARACTERISTICS
VCCA = 4.75 to 5.25 V; VCCD = 4.75 to 5.25 V; VCCO = 2.7 to 3.6 V; AGND and DGND shorted together;
Tamb = 0 to 70 °C; typical values measured at VCCA = VCCD = 5 V; VCCO = 3.3 V; VRB = 1.3 V; VRT = 3.7 V; CL = 10 pF
and Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
Supplies
VCCA
analog supply voltage
4.75
5.0 5.25
V
VCCD
digital supply voltage
4.75
5.0 5.25
V
VCCO
∆VCC
output stages supply voltage
supply voltage difference
between
2.7
3.3 3.6
V
VCCA − VCCD
−0.20
−
+0.20
V
VCCA − VCCO
−0.20
−
+2.55
V
VCCD − VCCO
−0.20
−
+2.55
V
ICCA
analog supply current
−
29
37
mA
ICCD
digital supply current
−
33
40
mA
ICCO
output stages supply current
fclk = 60 MHz; ramp input −
0.5 2.0
mA
Inputs
PIN CLK (REFERENCED TO DGND); note 1
VIL
LOW-level input voltage
0
VIH
HIGH-level input voltage
2
IIL
LOW-level input current
VCLK = 0.8 V
−1
IIH
HIGH-level input current
VCLK = 2 V
−
Ci
input capacitance
−
PINS OE; TC AND GRAY (REFERENCED TO DGND); see Tables 3 and 4
VIL
LOW-level input voltage
0
VIH
HIGH-level input voltage
2
IIL
LOW-level input current
VIL = 0.8 V
−1
IIH
HIGH-level input current
VIH = 2 V
−
PIN VI (ANALOG INPUT VOLTAGE REFERENCED TO AGND)
IIL
LOW-level input current
VI = VRB = 1.3 V
−
IIH
HIGH-level input current
VI = VRT = 3.7 V
−
Yi
input admittance
fi = 5 MHz; note 2
Ri input resistance
−
Ci input capacitance
3
−
0.8
V
−
VCCD
V
0
+1
µA
2
10
µA
2
−
pF
−
0.8
V
−
VCCD
V
−
−
µA
−
1
µA
0
−
µA
55
−
µA
45
−
kΩ
5
7
pF
2000 Jul 03
7