Philips Semiconductors
DVB selective AGC amplifier
Product specification
TDA9888TS; TDA9889TS
QUICK REFERENCE DATA
SYMBOL
VP
IP
Vo(LIF)(p-p)
GIF(max)
GIF(cr)
fosc
φN(synth)
αLIF
αN−1
αN+1
C/N
PSRR
PARAMETER
supply voltage
supply current
typical low IF operating output
voltage (peak-to-peak value)
maximum conversion gain
IF gain control range
synthesizer controlled oscillator
frequencies
CONDITIONS
note 1
output peak-to-peak level to
input RMS level ratio
see Fig.3
see Tables 1 and 2
synthesizer phase noise
performance
at 1 kHz
at 10 kHz
at 100 kHz
low IF band amplitude characteristic 0 dB at middle of band
(standard independent)
low-pass filter attenuation
8 MHz band; at 15.75 MHz
suppression of IF input frequencies input frequency between
below wanted band at low IF output 21 and 31 MHz; referenced
to 36 MHz
carrier-to-noise ratio at low IF
at ∆f > 1 MHz; see Fig.5
power supply ripple rejection
[residual ripple AM, modulation
factor m at 2 V (p-p) low IF signal]
fripple = 70 Hz; see Fig.7
MIN.
4.5
46
−
85
60
−
−
−
−
−
89
89
98
−0.9
15
30
112
−
TYP.
5
55
2
90
70
31
31.5
32
40
53
99
97
102
−
−
−
116
1.4
MAX.
5.5
64
−
−
−
−
−
−
−
−
−
−
−
+0.9
−
−
−
−
UNIT
V
mA
V
dB
dB
MHz
MHz
MHz
MHz
MHz
dBc
dBc
dBc
dB
dB
dB
dBc/Hz
%
Note
1. Some parameters can be decreased at VP = 4.5 V.
2004 Nov 02
3