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SMBJ10C 查看數據表(PDF) - Rectron Semiconductor

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SMBJ10C Datasheet PDF : 5 Pages
1 2 3 4 5
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SURFACE MOUNT GPP
GPP TRANSIENT VOLTAGE SUPPRESSOR
600 WATT PEAK POWER 5.0 WATTS STEADY STATE
TVS
TFMBJ
SERIES
FEATURES
* Plastic package has underwriters laboratory
* Glass passivated chip construction
* 600 watt surage capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time
DO-214AA
Ratings at 25 oC ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
0.083 (2.11)
0.077 (1.96)
0.180 (4.57)
0.160 (4.06)
0.155 (3.94)
0.130 (3.30)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.012 (0.305)
0.006 (0.152)
0.220 (5.59)
0.205 (5.21)
0.008 (0.203)
0.004 (0.102)
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types TFMBJ5.0 thru TFMBJ170
Electrical characteristics apply in both direction
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
Peak Power Dissipation with a 10/1000uS (Note 1,2, Fig.1)
Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 )
Steady State Power Dissipation at TL = 75oC (Note 2)
Peak Forward Surge Current 8.3mS single half sine-wave
superimposed on rated load (JEDEC method) (Note 2,3)
unidirectional only
Maximum Instantaneous Forward Voltage at 50A for unidirectional
only (Note 3,4)
Operating and Storage Temperature Range
SYMBOL
PPPM
IPPM
PM(AV)
IFSM
VF
TJ, TSTG
VALUE
Minimum 600
SEE TABLE 1
5.0
100
SEE NOTE 4
-55 to + 150
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25oC per Fig.2.
2. Mounted on 0.2 X 0.2”( 5.0 X 5.0mm ) copper pad to each terminal.
3. Lead temperature at TL = 25oC
4. Measured on 8.3mS single half sine-wave duty cycle = 4 pules per minute maximum.
5. VF = 3.5V on TFMBJ-5.0 thru TFMBJ-90 devices and VF = 5.0V on TFMBJ-100 thru TFMBJ-170 devices.
UNITS
Watts
Amps
Watts
Amps
Volts
0C
2002-12

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