TGA1319A 查看數據表（PDF） - TriQuint Semiconductor
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TGA1319A Datasheet PDF : 5 Pages
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Advance Product Information
January 19, 2001
MAXIMUM RATINGS
SYMBOL
V+
I+
I-
PIN
PD
TCH
TM
TSTG
PARAMETER 4/
POSITIVE SUPPLY VOLTAGE
POSITIVE SUPPLY CURRENT
NEGATIVE GATE CURRENT
INPUT CONTINUOUS WAVE POWER
POWER DISSIPATION
OPERATING CHANNEL TEMPERATURE
MOUNTING TEMPERATURE
(30 SECONDS)
STORAGE TEMPERATURE
VALUE
5V
60 mA
5.28 mA
15 dBm
.3 W
150 0C
320 0C
-65 to 150 0C
NOTES
1/
2/ 3/
1/ Total current for all stages.
2/ These ratings apply to each individual FET.
3/ Junction operating temperature will directly affect the device median time to failure (TM). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
4/ These ratings represent the maximum operable values for the device.
DC PROBE TESTS
(TA = 25 °C ± 5°C)
Symbol
Idss
VP
BVGS
BVGD
Parameter
Saturated Drain Current
Pinch-off Voltage
Breakdown Voltage gate-source
Breakdown Voltage gate-drain
Minimum
---
-1.5
---
---
Maximum
---
-0.5
---
---
Value
mA
V
V
V
ON-WAFER RF PROBE CHARACTERISTICS
(TA = 25 °C ± 5°C)
Vd = 3 V, Id1 = 15 mA, Id2 = 30 mA
Symbol Parameter
Test Condition
Gain
NF
PWR
Small Signal
Gain
Noise Figure
Output Power
@ P1dB
F = 21 – 27 GHz
F = 21 – 26.5 GHz
F = 21 – 27 GHz
Limit
Min Typ Max
18
---
Units
dB
---
2
dB
10
--- dBm
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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