TGF4230-SCC 查看數據表（PDF） - TriQuint Semiconductor
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TGF4230-SCC Datasheet PDF : 9 Pages
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Product Data Sheet
December 16, 2002
TGF4230-SCC
TABLE II
DC PROBE CHARACTERISTICS
(TA = 25 °C, Nominal)
Symbol
Parameter
Minimum Typical Maximum Unit Note
IDSS Saturated Drain Current
--
GM
Transconductance
--
VP
Pinch-off Voltage
1
VBGS
Breakdown Voltage
17
Gate-Source
VBGD
Breakdown Voltage
17
Gate-Drain
294
198
1.85
22
22
--
mA
1/
--
mS
1/
3
V
2/
30
V
2/
30
V
2/
1/ Total for two FETS
2/ VP, VBGS, and VBGD are negative.
T A B L E III
E LE C TR IC A L C H AR A C TE R IS TIC S
(T A = 25 °C , N o m in al)
B ias C o n d itio n s: V d = 8 V , Id = 50 m A + /- 10% , @ 8.5 G H z
Sym bol
Pout
Gp
PAE
Param eter
O utput Pow er
P ow er G ain
P o w e r A d d e d E fficie n cy
T y p ic a l
28.5
10
55
U nit
dBm
dB
%
Note: The recommended bias current for HFETs is 80 mA/mm. For this
1.2 mm HFET IQ is 96 mA.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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