TGA2511(2005) 查看數據表（PDF） - TriQuint Semiconductor
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TGA2511 Datasheet PDF : 14 Pages
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Advance Product Information
July 14, 2005
TGA2511
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
Vd
Drain Voltage
Vg
Gate Voltage Range
Id
Drain Current (gate biased)
Ig Gate Current
PIN
PD
TCH
TM
TSTG
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
VALUE
[3.5 + (0.0125)(Id)] V
-1 TO +0.5 V
240 mA
14 mA
21 dBm
See note 5/
117 0C
320 0C
-65 to 150 0C
NOTES
2/ 3/
2/ 4/
4/
2/
6/ 7/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed
PD.
3/ Unit for Id is A
4/ Total current for the entire MMIC.
5/ For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (117 0C – TBASE 0C) / TJC (0C/W)
Where TBASE is the base plate temperature, TJC is on Table IV.
6/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possibl
levels.
7/ These ratings apply to each individual FET.
TABLE II
DC PROBE TESTS
(Ta = 25 0C, Nominal)
SYMBOL
VBVGS, Q1
VP, Q1,2,5,6
PARAMETER
Breakdown Voltage Gate-
Source
Pinch-Off Voltage
Q1, Q2, Q5, Q6 are 400 um FET.
MIN.
-30
-0.7
TYP.
MAX.
-5
-0.1
UNITS
V
V
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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