TGA2513-EPU 查看數據表（PDF） - TriQuint Semiconductor

零件编号

产品描述 (功能)

生产厂家

TGA2513-EPU

Wideband LNA with AGC

TriQuint Semiconductor 

Advance Product Information

September 2, 2005

TABLE I

MAXIMUM RATINGS 1/

TGA2513-EPU

SYMBOL

PARAMETER

V+

Positive Supply Voltage

Vg1 Gate 1 Supply Voltage Range

VALUE

7V

-2V TO 0 V

NOTES

2/

Vg2 Gate 2 Supply Voltage Range

I+

Positive Supply Current

| IG | Gate Supply Current

PIN Input Continuous Wave Power

PD Power Dissipation

TCH Operating Channel Temperature

TM Mounting Temperature (30 Seconds)

TSTG Storage Temperature

-0.5 V TO +3.5 V

151 mA

10 mA

21 dBm

1.5 W

117 °C

320 °C

-65 to 117 °C

2/

2/

2/, 3/

4/, 5/

1/ These ratings represent the maximum operable values for this device.

2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply

current, input power, and output power shall not exceed PD.

3/ When operated at this power dissipation with a base plate temperature of 70 °C, the median

life is 1 E+6 hours.

4/ Junction operating temperature will directly affect the device median time to failure (TM). For

maximum life, it is recommended that junction temperatures be maintained at the lowest

possible levels.

5/ These ratings apply to each individual FET.

SYMBOL

Idss, Q1- Q10

Vp, Q1-Q10

VBVGD, Q1-Q10

VBVGS, Q1-Q10

TABLE II

DC PROBE TEST

(TA = 25 °C, Nominal)

PARAMETER

MINIMUM

Saturated Drain Current

--

Pinch-off Voltage

-1

Breakdown Voltage Gate-

-30

Drain

Breakdown Voltage Gate-

-30

Source

MAXIMUM

216

0

-5

-5

UNIT

mA

V

V

V

Note: Q1-Q10 is a 720um size FET.

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications are subject to change without notice

2

TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com

Share Link: