TGA4505 查看數據表（PDF） - TriQuint Semiconductor

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TGA4505

4 Watt Ka Band HPA

TriQuint Semiconductor 

TGA4505

Assembly Process Notes

Reflow process assembly notes:

• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C

(for 30 sec max).

• An alloy station or conveyor furnace with reducing atmosphere should be used.

• No fluxes should be utilized.

• Coefficient of thermal expansion matching is critical for long-term reliability.

• Devices must be stored in a dry nitrogen atmosphere.

Component placement and adhesive attachment assembly notes:

• Vacuum pencils and/or vacuum collets are the preferred method of pick up.

• Air bridges must be avoided during placement.

• The force impact is critical during auto placement.

• Organic attachment can be used in low-power applications.

• Curing should be done in a convection oven; proper exhaust is a safety concern.

• Microwave or radiant curing should not be used because of differential heating.

• Coefficient of thermal expansion matching is critical.

Interconnect process assembly notes:

• Thermosonic ball bonding is the preferred interconnect technique.

• Force, time, and ultrasonics are critical parameters.

• Aluminum wire should not be used.

• Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.

• Maximum stage temperature is 200°C.

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should

be observed during handling, assembly and test.

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TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

May 2009 © Rev -

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