TGA4530(2007) 查看數據表（PDF） - TriQuint Semiconductor

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TGA4530
(Rev.:2007)

K Band High Linearity Power Amplifier

TriQuint Semiconductor 

Product Data Sheet

March 5, 2007

TGA4530

TABLE II

ELECTRICAL CHARACTERISTICS

(Ta = 25 0C Nominal)

PARAMETER

Frequency Range

Drain Voltage, Vd

Drain Current, Id

Gate Voltage, Vg

Small Signal Gain, S21

Input Return Loss, S11

Output Return Loss, S22

Saturated Output Power @ Pin = 16dBm, Psat

Output Power @ 1dB Gain Compression, P1dB

Output Third Order Intercept, OTOI @ 20dBm/Tone

Small Signal Gain Temperature Coefficient

Noise Figure @ 19GHz

TYPICAL

17 - 21

7

825

-0.45

20

20

20

32

30

42

-0.03

6

UNITS

GHz

V

mA

V

dB

dB

dB

dBm

dBm

dBm

dB/0C

dB

TABLE III

THERMAL INFORMATION

PARAMETER

TEST CONDITIONS

TCH

(OC)

θJC

(°C/W)

TM

(HRS)

θJC Thermal Resistance

(channel to Case)

Vd = 7 V

Id = 825 mA

Pdiss = 5.78 W

Small Signal

150

14.7

1.0E+6

Vd = 7 V

θJC Thermal Resistance Id = 1050 mA @ Psat

150

(channel to Case)

Pout = 1.6 W (RF)

Pdiss = 5.75 W

14.7

1.0E+6

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo

Carrier at 65oC baseplate temperature.

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3

TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com

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