TIC106D(2012) 查看數據表（PDF） - Comset Semiconductors
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TIC106D Datasheet PDF : 4 Pages
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SEMICONDUCTORS
TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M,
TIC106N, TIC106S
THERMAL CHARACTERISTICS
Symbol
Ratings
tgt
Gate-controlled
Turn-on time
VAA = 30 V, RL = 6 Ω
RGK(eff) = 5 kΩ
Vin = 50 V
tq
Circuit-communicated
Turn-off time
VAA = 30 V, RL = 6 Ω
IRM ≈ 8 A
R∂JC
Junction to case thermal resistance
R∂JA
Junction to free air thermal resistance
Value
1.75
7.7
≤ 3.5
≤ 62.5
Unit
µs
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
IDRM
Repetitive peak off-state current
IRRM
Repetitive peak reverse current
IGT
Gate trigger current
VGT
Gate trigger voltage
IH
Holding current
VTM
dv/dt
Peak on-state voltage
Critical rate of rise of off-state
voltage
Test Condition(s) Min Typ Max Unit
VD = Rated VDRM
RGK = 1 kΩ, TC = 110°C
-
VR = Rated VRRM, IG = 0
TC = 110°C
-
- 400 µA
-
1 mA
VAA = 6 V, RL = 100 Ω
tp(g) ≥ 20µs
- 60 200 µA
VAA = 6 V, RL = 100 Ω
RGK = 1 kΩ, tp(g) ≥ 20µs
-
TC = -40°C
- 1.2
VAA = 6 V, RL = 100 Ω
RGK = 1 kΩ, tp(g) ≥ 20µs
0.4 0.6
1
V
VAA = 6 V, RL = 100 Ω
RGK = 1 kΩ, tp(g) ≥ 20µs 0.2
-
-
TC = 110°C
VAA = 6 V, RGK = 1 kΩ
initiating IT = 10 mA
VAA = 6 V, RGK = 1 kΩ
initiating IT = 10 mA
TC = -40°C
ITM = 5A (see Note6)
-
-
5
mA
-
-
8
-
- 1.7 V
VD = Rated VD
RGK = 1 kΩ, TC = 110°C
-
10
- V/µs
29/10/2012
COMSET SEMICONDUCTORS
2|4
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