61089B 查看數據表（PDF） - Unspecified

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61089B

High Voltage Ringing SLIC Protector

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TISP61089B High Voltage Ringing SLIC Protector

Description (Continued)

The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of -20 V to -150 V. The protector gate is

connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. The protection voltage will

then track the negative supply voltage and the overvoltage stress on the SLIC is minimized.

Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative

supply rail value. If sufficient current is available from the overvoltage, then the protector SCR will switch into a low voltage on-state condition.

As the overvoltage subsides, the high holding current of TISP61089B SCR prevents d.c. latchup.

The TISP61089B is intended to be used with a series combination of a 40 Ω or higher resistance and a suitable overcurrent protector. Power

fault compliance requires the series overcurrent element to open-circuit or become high impedance (see Applications Information). For

equipment compliant to ITU-T recommendations K.20 or K.21 or K.45 only, the series resistor value is set by the coordination requirements.

For coordination with a 400 V limit GDT, a minimum series resistor value of 10 Ω is recommended.

These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system

operation they are virtually transparent. The TISP61089B buffered gate design reduces the loading on the SLIC supply during overvoltages

caused by power cross and induction. The TISP61089B is available in a 8-pin plastic small-outline surface mount package.

Absolute Maximum Ratings, -40 °C ≤ TJ ≤ 85 °C (Unless Otherwise Noted)

Rating

Repetitive peak off-state voltage, VGK = 0

Repetitive peak gate-cathode voltage, VKA = 0

Non-repetitive peak on-state pulse current (see Notes 1 and 2)

10/1000 µs (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)

5/320 µs (ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700 µs)

10/360 µs (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)

1.2/50 µs (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)

2/10 µs (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999,

Section 4)

Non-repetitive peak on-state current, 60 Hz (see Notes 1, 2 and 3)

TJ = 25 °C

0.5 s

1s

2s

5s

30 s

900 s

Non-repetitive peak gate current, 1/2 µs pulse, cathodes commoned (see Notes 1 and 2)

Operating free-air temperature range

Junction temperature

Storage temperature range

Symbol

VDRM

VGKRM

ITSP

ITSM

I GSM

TA

TJ

Tstg

Value

Unit

-170

V

-167

V

30

40

40

A

100

120

170

6.5

4.6

3.4

A

2.3

1.3

0.73

+40

A

-40 to +85

°C

-40 to +150

°C

-40 to +150

°C

NOTES: 1. Initially, the protector must be in thermal equilibrium with -40 °C ≤ TJ ≤ 85 °C. The surge may be repeated after the device returns

to its initial conditions.

2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both

terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice

the rated current value of an individual terminal pair). Above 85 °C, derate linearly to zero at 150 °C lead temperature.

3. Values for VGG = -100 V. For values at other voltages see Figure 2.

OCTOBER 2000 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

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