TISP7072F3SL-S 查看數據表（PDF） - Bourns, Inc

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TISP7072F3SL-S

LOW-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

Bourns, Inc 

TISP70xxF3 (LV) Overvoltage Protector Series

Electrical Characteristics for all Terminal Pairs, TA = 25 °C (Unless Otherwise Noted)

IDRM

Parameter

Repetitive peak off-

state current

Test Conditions

VD = VDRM, 0 °C < TA < 70 °C

V(BO) Breakover voltage

Impulse breakover

V(BO) voltage

I(BO)

VT

IH

dv/dt

ID

Breakover current

On-state voltage

Holding current

Critical rate of rise of

off-state voltage

Off-state current

Coff Off-state capacitance

dv/dt = ±250 V/ms, RSOURCE = 300 Ω

dv/dt ≤ ±1000 V/µs, Linear voltage ramp,

Maximum ramp value = ±500 V

di/dt = ±20 A/µs, Linear current ramp,

Maximum ramp value = ±10 A

dv/dt = ±250 V/ms, RSOURCE = 300 Ω

IT = ±5 A, tW = 100 µs

IT = ±5 A, di/dt = - /+30 mA/ms

Linear voltage ramp, Maximum ramp value < 0.85VDRM

VD = ±50 V

f = 1 MHz, Vd = 1 V rms, VD = 0

f = 1 MHz, Vd = 1 V rms, VD = -1 V

f = 1 MHz, Vd = 1 V rms, VD = -2 V

f = 1 MHz, Vd = 1 V rms, VD = -5 V

f = 1 MHz, Vd = 1 V rms, VD = -50 V

Min Typ

‘7072F3

‘7082F3

‘7072F3

‘7082F3

±0.1

±0.15

±5

53

56

51

43

25

Max

±10

±72

±82

±90

±100

±0.8

±5

±10

69

73

66

56

33

Unit

µA

V

V

A

V

A

kV/µs

µA

pF

f = 1 MHz, Vd = 1 V rms, VDTR = 0

(see Note 4)

29

37

NOTE 4: Three-terminal guarded measurement, unmeasured terminal voltage bias is zero. First six capacitance values, with bias VD, are

for the R-G and T-G terminals only. The last capacitance value, with bias VDTR, is for the T-R terminals.

Thermal Characteristics

Parameter

RθJA Junction to free air thermal resistance

Test Conditions

Min Typ Max Unit

Ptot = 0.8 W, TA = 25 °C

5 cm2, FR4 PCB

D Package

SL Package

160

135 ° C/W

MARCH 1994 - REVISED MARCH 2006

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

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