TK12A60W 查看數據表（PDF） - Toshiba

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TK12A60W

MOSFETs Silicon N-Channel MOS (DTMOS)

Toshiba 

MOSFETs Silicon N-Channel MOS (DTMOS)

TK12A60W

1. Applications

• Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.)

by used to Super Junction Structure : DTMOS

(2) Easy to control Gate switching

(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA)

3. Packaging and Internal Circuit

TK12A60W

TO-220SIS

1: Gate

2: Drain

3: Source

1

2012-08-27

Rev.2.0

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