DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TL072ACN 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
TL072ACN Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
TL072 - TL072A - TL072B
Table 3.
Symbol
Electrical characteristics at VCC = ±15V, Tamb = +25°C (unless otherwise specified)
(continued)
Parameter
TL072I,M,AC,AI,AM
BC,BI,BM
TL072C
Unit
Min. Typ. Max. Min. Typ. Max.
±Vopp
SR
tr
Kov
GBP
Ri
THD
en
Output voltage swing
Tamb = +25°C
RL = 2kΩ
RL = 10kΩ
Tmin Tamb Tmax
RL = 2kΩ
RL = 10kΩ
Slew rate (Tamb = +25°C)
Vin = 10V, RL = 2kΩ, CL = 100pF, unity gain
Rise time (Tamb = +25°C)
Vin = 20mV, RL = 2kΩ, CL = 100pF, unity gain
Overshoot (Tamb = +25°C)
Vin = 20mV, RL = 2kΩ, CL = 100pF, unity gain
Gain bandwidth product (Tamb = +25°C)
Vin = 10mV, RL = 2kΩ, CL = 100pF, f= 100kHz
Input resistance
Total harmonic distortion (Tamb = +25°C)
f= 1kHz, RL = 2kΩ,CL = 100pF, Av = 20dB,
Vo = 2Vpp
Equivalent input noise voltage
RS = 100Ω, f = 1KHz
m Phase margin
10 12
12 13.5
10
12
8 16
0.1
10
2.5 4
1012
0.01
15
45
10 12
12 13.5
10
12
8 16
0.1
10
2.5 4
1012
0.01
15
45
V
V/μs
μs
%
MHz
Ω
%
---n---V-----
Hz
degre
es
Channel separation
Vo1/Vo2
Av = 100
120
120
dB
1. The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction
temperature.
6/16

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]