GM71CS17800CJ-6 查看數據表（PDF） - Hynix Semiconductor
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GM71CS17800CJ-6 Datasheet PDF : 9 Pages
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Description
The GM71C(S)17800C/CL is the new
generation dynamic RAM organized 2,097,152
x 8 bit. GM71C(S)17800C/CL has realized
higher density, higher performance and various
functions by utilizing advanced CMOS process
technology. The GM71C(S)17800C/CL offers
Fast Page Mode as a high speed access mode.
Multiplexed address inputs permit the
GM71C(S)17800C/CL to be packaged in
standard 400 mil 28pin plastic SOJ, and standard
400mil 28 pin plastic TSOP II. The package size
provides high system bit densities and is
compatible with widely available automated
testing and insertion equipment.
Pin Configuration
GM71C17800C
GM71CS17800CL
2,097,152 WORDS x 8 BIT
CMOS DYNAMIC RAM
Features
* 2,097,152 Words x 8 Bit Organization
* Fast Page Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time
(Unit: ns)
t t RAC CAC tRC tPC
GM71C(S)17800C/CL-5 50 13 90 35
GM71C(S)17800C/CL-6 60 15 110 40
GM71C(S)17800C/CL-7 70 18 130 45
* Low Power
Active : 715/660/605mW (MAX)
Standby : 11mW (CMOS level : MAX)
0.83mW (L-version : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 2048 Refresh Cycles/32ms
* 2048 Refresh Cycles/128ms (L- version)
* Battery Back Up Operation (L- version)
* Self Refresh Operation (L-version)
28 SOJ
VSS 1
I/O0 2
I/O1 3
I/O2 4
I/O3 5
WE 6
RAS 7
NC 8
A10 9
A0 10
A1 11
A2 12
A3 13
VCC 14
28 VSS
27 I/O7
26 I/O6
25 I/O5
24 I/O4
23 CAS
22 OE
21 A9
20 A8
19 A7
18 A6
17 A5
16 A4
15 VSS
28 TSOP II
VSS 1
I/O0 2
I/O1 3
I/O2 4
I/O3 5
WE 6
RAS 7
NC 8
A10 9
A0 10
A1 11
A2 12
A3 13
VCC 14
28 VSS
27 I/O7
26 I/O6
25 I/O5
24 I/O4
23 CAS
22 OE
21 A9
20 A8
19 A7
18 A6
17 A5
16 A4
15 VSS
(Top View)
Rev 0.1 / Apr’01
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