GM71CS17800CL-6 查看數據表（PDF） - Hynix Semiconductor

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GM71CS17800CL-6

CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns

Hynix Semiconductor 

GM71C17800C

GM71CS17800CL

DC Electrical Characteristics (VCC = 5V+/-10%, Vss = 0V, TA = 0 ~ 70C)

Symbol

VOH

VOL

ICC1

Parameter

Output Level

Output "H" Level Voltage (IOUT = -5mA)

Output Level

Output "L" Level Voltage (IOUT = 4.2mA)

Operating Current

Average Power Supply Operating Current

(RAS, CAS Cycling: tRC = tRC min)

ICC2

Standby Current (TTL)

Power Supply Standby Current

(RAS, CAS = VIH, DOUT = High-Z)

ICC3

RAS Only Refresh Current

Average Power Supply Current

RAS Only Refresh Mode

(tRC = tRC min)

ICC4

Fast Page Mode Current

Average Power Supply Current

Fast Page Mode

(tPC = tPC min)

Min Max Unit Note

2.4 VCC

V

0

50ns -

60ns -

70ns -

0.4 V

110

100 mA 1, 2

90

-

50ns -

60ns -

70ns -

50ns -

60ns -

70ns -

2

mA

110

100 mA 2

90

100

90 mA 1, 3

85

ICC5

Standby Current (CMOS)

Power Supply Standby Current

(RAS, CAS >= VCC - 0.2V, Dout = High-Z)

ICC6

CAS-before-RAS Refresh Current

(tRC = tRC min)

ICC7

Battery Back Up Operating Current

(Standby with CBR Refresh)

(tRC=62.5us, tRAS<=0.3us, DOUT=High-Z)

ICC8

Standby Current RAS = VIH

CAS = VIL

DOUT = Enable

-

1 mA

-

150 uA

5

50ns - 110

60ns - 100 mA

70ns -

90

- 500 uA 4,5

-

5

mA 1

ICC9

Self-Refresh Mode Current

(RAS, CAS<=0.2V, DOUT=High-Z)

-

300 uA

5

IL(I)

Input Leakage Current

Any Input (0V<=VIN<= 6V)

IL(O)

Output Leakage Current

(DOUT is Disabled, 0V<=VOUT<= 6V)

Note: 1. ICC depends on output load condition when the device is selected.

ICC(max) is specified at the output open condition.

2. Address can be changed once or less while RAS = VIL.

3. Address can be changed once or less while CAS = VIH.

4. CAS = L (<=0.2) while RAS = L (<=0.2).

5. L-version.

-10 10 uA

-10 10 uA

Rev 0.1 / Apr’01

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